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The basic problem of simulation and modeling of Image Intensified Charge Coupled Device (ICCD) is the difference between the analytical Modulation Transfer Function (MTF) formulation used in the model...
In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give dr...
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...
A new, completely numerical three-dimensional model of a MOSFET allows a unified treatment of small devices. Preliminary results show that device size effects the surface potential and threshold volta...
The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related...
This manuscript report on a new lithium electrolyte, allowing the manufacturing of electrochemical systems, such as electrochromic devices, in ambient atmosphere. It is based on lithium bis-trifluorom...
Thermal analysis during the design process is an essential step towards the achievement of high reliability in modern high density hybrid and integrated circuits. Thermal analysis is also essential fo...
The results of a study into the fabrication of thick film multilayer devices which include resistors on and under the thick film dielectric layers are presented. Although the resistive values of the r...
The development of thick-film functional devices having oscillation, negative resistance, switching, memory and so on has been needed. New non-volatile memory devices manufactured of Nb2O5-based thick...

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