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Integration of High-Power Semiconductor Lasers Using Dry-Etched Mirrors
High-Power Semiconductor Lasers Dry-Etched Mirrors
2010/7/15
Broad-area InGaAs-AlGaAs laser diodes emitting at a wavelength of 980 nm with dry-etched mirror facets are presented. The devices exhibit optical output powers up to 1.5W per facet at room temperature...