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100°C, 10 Gbps Operation of Buried Tunnel Junction GaInNAs VCSELs
Buried Tunnel Junction GaInNAs VCSELs
2015/8/3
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25°C to 100°C with operation current of 5.6 mA and extinction ratio of 4.2 dB.
100°C, 10 Gbps Operation of Buried Tunnel Junction GaInNAs VCSELs
Buried Tunnel Junction GaInNAs VCSELs
2015/8/3
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25°C to 100°C with operation current of 5.6 mA and extinction ratio of 4.2 dB.
Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector
silicon p-n junction photodetector
2011/5/3
On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) ...