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Photoluminescence Characterization of Al/Al2O3/InP MIS Structures passivated by anodic oxidation
Indium phosphide MIS structures Photoluminescence
2010/4/12
Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of Al2O3 on InP. Polyphosphate thin films of thickness 100-150 Å were used to passivate the interface In...