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The Temperature Dependence of the Electronic Structure of Si d-doped GaAs
d-doped GaAs electronic structure temperature-dependence
2010/4/13
We investigated theoretically the change of electronic properties of Si d-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuni...
Single Si d-Doped GaAs Investigations by New Photothermal Wavelength Modulated Photocurrent Technique
Photothermal Wavelength Modulated Photocurrent
2010/4/16
New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported. This technique is used for investigation of the MBE grown p-GaAs sample in which a single Si-layer was embedded with a...