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2017年碳化硅和相关材料国际会议（International Conference on Silicon Carbide and Related Materials 2017）
2017年 碳化硅和相关材料 国际会议
2017/3/9
The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, en...
Silicon Carbide-Strengthened Magnetorheological Elastomer: Preparation and Mechanical Property
Silicon carbide magnetorheological elastomers viscoelastic properties of SiC particles magnetorheological effect
2015/3/24
A novel silicon carbide (SiC)-strengthened magnetorheological elastomers (MREs) was developed to enhance its viscoelastic performance. The influences of the size and weight content of the SiC particle...
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Improving the Dynamic Properties of MRE under Cyclic Loading by Incorporating Silicon Carbide Nanoparticles
Magnetorheological elastomers cycle performance silicon carbide nanoparticles energy storage modulus
2015/3/24
A novel method was developed to enhance the cyclic performance of magnetorheological elastomers (MREs) by incorporating silicon carbide (SiC) nanoparticles. Different amounts of SiC nanoparticles were...
Rectification of evanescent heat transfer between dielectric-coated and uncoated silicon carbide plates
transfer between dielectric-coated uncoated silicon carbide plates
2015/8/7
Here, we show analytically that the thermal rectification via evanescent waves is obtained in the parallel semi-infinite bodies of the dielectric-coated silicon carbide and uncoated silico...
Atomistic Simulations of the Mechanical Deformation of Irradiation-amorphized Silicon Carbide
silicon carbide irradiation-amorphization molecular dynamics modeling
2011/8/3
Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material’s mechanical properties. Currently there lacks a unified physical model cap...
Laser surface treatment of magnesium alloys with silicon carbide powder
Surface treatment Magnesium alloys Laser treatment
2009/12/3
Purpose: . The aim of this work was to improve the surface layer cast magnesium cast alloys by laser surface treatment and determine the laser treatment parameters.
Design/methodology/approach: The l...
Superconductivity in heavily boron-doped silicon carbide
boron-doped SiC hexagona cubic SiC type-I superconductor
2010/10/12
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in
2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier
doping of wid...
Superconductivity in carrier-doped silicon carbide
boron-doped SiC Al-doped SiC hexagonal and cubic SiC type-I superconductor type-II superconductor
2010/10/12
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and
Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a
critical temperature Tc = 1.5 K....
Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy
2007/7/28
专著信息
书名
Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy
语种
英文
撰写或编译
作者
C.H. Lam,C.C. Ling,H.M. Weng,Deng-sheng Hang,C.D. Beling,S. Fung,
第一作者单位
出版社
Ma...
专著信息
书名
Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
语种
英文
撰写或编译
作者
C. H. Lam,T. W. Lam,C. C. Ling,S. Fung,C. D. Beling,Hang De-Sheng and Weng Huimin
第一作者单位
出版社
J.P...
期刊信息
篇名
Cathodoluminescence of diamond Synthesized from silicon-carbide
语种
英文
撰写或编译
作者
S.Hong,H.Kanda and L.Gou
第一作者单位
刊物名称
Chinese science Bulletin
页面
1996,41:3,208-212
出版日期
1996年
月
日
文章标识(ISSN)
相关项目...
Review of "Advances in Silicon Carbide Processing and Applications" 1st Edition by Steven E. Saddow and Anant Agarwal
Advances in Silicon Carbide Processing and Applications Steven E. Saddow Anant Agarwal
2010/3/1
"Advances in Silicon Carbide Processing and Applications" specifically targets the technology of two key application areas, propulsion systems in electronic vehicles and sensors for deployment in extr...
An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide
Local valence band density of states amorphous silicon carbide hybrid orbitals
2010/12/9
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed.