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Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
Mid-IR-laser microscopy defect investigation bulk semiconductors
2011/9/9
A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique—a mid-IR-laser microsco...
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
Optical beam-induced scattering mode mid-IR laser microscopy
2011/9/9
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning
mid-IR-laser microscopy. The technique in ...