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Simulation of storage time versus reverse bias current for p+n and pin diodes
Reverse recovery pin diode semiconductor devices semiconductor devices simulation
2011/3/22
In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to ...
Optical and electrical characterization of reverse bias luminescence in InGaN light emitting diodes
GaN LED electroluminescence reverse-bias leakage current hot carrier
2011/5/5
This study investigates the reliability physics of the reverse bias luminescence (RBL) of
InGaN/GaN light emitting diodes. Optical and electrical characterization techniques including
surface temper...