搜索结果: 1-10 共查到“凝聚态物理学 Silicon:”相关记录10条 . 查询时间(0.093 秒)
Influence of Mutual Drag of Light and Heavy Holes on conductivity of p-Silicon and p-Germanium
Mutual Drag of Light avy Holes
2010/11/25
Conductivity of p-Si and p-Ge is considered for two band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag sig-nificantly d...
Researchers claim to have fabricated the first all-optical transistor on a silicon chip. This device allows the transmission of light emitted by one laser to be governed by the intensity of another. T...
Effect of hydrogen on the microstructure evolution of nanocrystalline silicon
Effect of hydrogen microstructure evolution of nanocrystalline silicon
2010/11/22
We investigated the effect of dissolved hydrogen on the microstructure evolution of anocrystalline silicon. Through molecular dynamics simulations we characterize the local and overall structural feat...
Ab-initio calculations for the beta-tin diamond transition in Silicon: comparing theories with experiments
Ab-initio calculations for the beta-tin diamond transition Silicon:
2010/11/19
We investigate the pressure-induced metal-insulator transition from diamond to β-tin in bulk Silicon,using quantum Monte Carlo (QMC) and density functional theory (DFT) approaches. We show
that it is...
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
The room-temperature longitudinal piezoresistance of n-type and p-type silicon along selected
crystal axes has been investigated under uniaxial compressive stresses up to 3 GPa. While the
conductanc...
Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films
PECVD Nitride films C-V G-V I-V P M A hysteresis and memory window
2010/4/9
A memory capacitor formed from Al/Si3N4/Si was prepared by means of trapping and de trapping mechanism of the dielectric films. Charge trapping and interface state characteristics of silicon nitride (...
Influence of the Current Density and Resistivity on the Optical Properties of P-Type Porous Silicon Thin Films Fabricated by the Electrochemical Anodizing Method
Porous silicon Photoluminescence Optical properties Reflectance Optical absorption
2010/9/29
Porous Silicon thin films were produced in this work by the electrochemical anodizing method. The samples were fabricated anodizing p type Si substrates with different resistivities in hydrofluoric ac...
Silicon Adsorption In Single Walled Nanotubes
Nanotube Silicon adsorption Monte Carlo simulations First principle calculation
2010/9/25
Using density functional (DF) calculations and Monte Carlo (MC) simulations we have investigated the main electronic and structural properties of silicon interacting with single walled carbon nanotube...
Profiling of Lithium and Potassium into Silicon
Semiconductor Diffusion Sheet resistance Surface concentration
2010/4/9
The profiling of Lithium and Potassium into Silicon doped by electro deposition from molten salts (LiBr, KI) has been studied for various time periods and deposition currents. For the samples studied,...