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Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy
Vertical Alignment Ultrathin Gallium Phosphide Nanowire Arrays Silicon Chemical Beam Epitaxy
2016/12/2
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
Nucleation and growth Theory and models of film growth
2011/9/1
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to s...
The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
A. Semiconductors B. Impurities in semiconductors C. Optical properties D. Hall effect measurement
2011/12/13
The nitrogen-doped, p-type ZnO film was grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (c-Al2O3) using radical NO as oxygen and nitrogen sources. The activation energy of ...
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grwon by Molecular Beam Epitaxy
2007/7/28
期刊信息
篇名
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grwon by Molecular Beam Epitaxy
语种
英文
撰写或编译
作者
Lu Youming,Shen Dezhen,Liu Yuchun
第一作者单位
刊物名称
Chin.Phys. Lett
页面
19(1) 1152(2002).
出版日...
期刊信息
篇名
Photoluminescence of ZnSe-ZnS SQWs Grown by Vapor Epitaxy
语种
英文
撰写或编译
作者
Y.M.Lu,D.Z.Shen,Y.C.Liu,J.Y.Zhang,X.W.Fan
第一作者单位
刊物名称
Chin. Phys. Lett
页面
19(1) (2002)131.
出版日期
2002年
月
日
文章标识(ISSN)
相关...
Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy
Liquid phase epitaxy Surface structure Quaternary semiconductors
2010/9/29
We studied growth mechanisms in semiconducting Ga1¡xInxAsySb1¡y films grown by liquid phase epitaxy on (100) GaSb:Te (1017 cm¡3) substrates at 600 ° C solution-substrate temperature....
Optical and Structural Properties of GaAs/GaInP Quantum Wells Grown by Chemical Beam Epitaxy
GaAs/GaInP Quantum Wells Chemical Beam Epitaxy
2010/10/21
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), phot...
Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Electrical Properties Bi-Doped PbTe Layers Molecular Beam Epitaxy BaF2 Substrates
2010/10/22
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying fr...
Characterization of PbTe p-n+ Junction Grown by Molecular Beam Epitaxy
PbTe p-n+ Junction Molecular Beam Epitaxy
2010/10/22
In this work we investigate the electrical properties of PbTe p ¡ n+ junction. Mesa diodes were fabricated from p ¡ n+ PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy....
Butt-Coupling Loss of 0.1 dB/Interface in InP/InGaAs Multi-Quantum-Well Waveguide-Waveguide Structures grown by Selective Area Chemical Beam Epitaxy
integrated optics butt-coupling SAE CBE
2010/4/16
The lateral coupling of waveguiding structures in both [011] and [0\bar{1}1] directions is studied using embedded selective area epitaxy by Chemical Beam Epitaxy. All growth steps are carried out unde...