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We fabricated high-mobility δ-doped structures in SrTiO3 thin films in order to investigate the low temperature electronic transport properties of confined carriers in this system. An enhancement of t...
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes in...
The results of thermoelectric power and electron drift mobility in AlxGa1-xN lattice-matched to GaN are calculated for different temperatures, free-electron concentrations and compositions. The two-mo...
A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gal...
Analytic expressions are derived to describe the electron mobility and relaxation rate in the rectangular quantum wire experiencing scattering due to alloy disorder. The dependence of electron mobilit...

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