搜索结果: 1-15 共查到“理学 H gate”相关记录32条 . 查询时间(0.075 秒)
Academy of Mathematics and Systems Science, CAS Colloquia & Seminars：Quantum State and Gate Verification with Minimum Settings
最小设置 量子态 门验证
2023/4/14
Efficient verification of quantum states and gates is crucial to the development of quantum technologies. Although the sample complexities of quantum state verification and quantum gate verification h...
2014年8月6日，美国Gate Fuels生物能源公司技术总监张晓舟博士应邀到中国科学院天津工业生物技术研究所进行学术交流，并作了题为Dancing with Bacillus for a Clean and Sustainable World的学术报告。黄志勇研究员主持报告会。
2014年8月6日，美国Gate Fuels生物能源公司技术总监张晓舟博士应邀到中国科学院天津工业生物技术研究所进行学术交流，并作了题为Dancing with Bacillus for a Clean and Sustainable World的学术报告。黄志勇研究员主持报告会。
Complete universal quantum gate set approaching fault-tolerant thresholds with superconducting qubits
Complete universal quantum gate set fault-tolerant thresholds superconducting qubits
2012/2/27
We use quantum process tomography to characterize a full universal set of all-microwave gates on two superconducting single-frequency single-junction transmon qubits. All extracted gate fidelities, in...
Molecule States in a Gate Tunable Graphene Double Quantum Dot
Molecule States Gate Tunable Graphene Double Quantum Dot
2010/11/25
We have measured a graphene double quantum dot device with multiple electrostatic gates that
are used to enhance control to investigate it. At low temperatures the transport measurements
reveal hone...
Manipulation of the Lande g-factor in InAs quantum dots through application of anisotropic gate potentials
Lande g-factor anisotropic gate potentials
2010/11/19
We study the variation in the Lande g-factor of electron spins induced by an anisotropic gate
potential in InAs quantum dots for potential use as non-charge based logic devices. In this paper,we pres...
Teleportation-based realization of an optical quantum two-qubit entangling gate
teleportation-based realization optical quantum entangling gate
2010/11/8
In recent years, there has been heightened interest in quantum teleportation, which allows for the transfer of unknown quantum states over arbitrary distances. Quantum teleportation not only serves as...
Strong gate coupling of high-Q nanomechanical resonators
nanomechanics NEMS quantum limit detection dissipation
2010/11/24
The detection of mechanical vibrations near the quantum limit is a formidable challenge since the displacement becomes vanishingly small when the number of phonon quanta tends towards zero.
An intere...
Improved phase gate reliability in systems with neutral Ising anyons
Improved phase gate reliability systems neutral Ising anyons
2010/10/21
Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. T...
Topological Quantum Gate Construction by Iterative Pseudogroup Hashing
Topological Quantum Gate Construction Iterative Pseudogroup Hashing
2010/10/21
We describe the hashing technique to obtain a fast approximation of a target quantum gate in the unitary group SU(2) represented by a product of the elements ofa universal basis. The hashing exploits ...
We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanch...
Strong entanglement causes low gate fidelity in inaccurate one-way quantum computation
one-way quantum computation Strong entanglement low gate fidelity
2010/3/10
We study how entanglement among the register qubits affects the gate fidelity in the one-way quantum computation if a measurement is inaccurate. We show that the mean gate fidelity is upper bounded by...
Preliminary simulation studies on a cylindrical PEM scanner using GATE
simulation GATE cylindrical PEM evaluation
2009/12/24
In this paper, we investigate the performance of a cylindrical positron emission mammography (PEM) by simulation, in order to estimate its feasibility before implementation. A well-developed simulatio...
Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide
silicon on insulator total-dose irradiation effect H gate subthreshold charge separation photoluminescence
2009/7/31
In this work, we investigate the back-gate I-V characteristics for two kinds of NMOSFET/ SIMOX transistors with H gate structure fabricated on two different SOI wafers. A transistors are made on
the ...
Variability of Near-Surface Currents in the Atlantic North Equatorial Countercurrent during GATE
Near-Surface Currents GATE Atlantic North Equatorial Countercurrent
2009/2/18
Measurements of wind at 5 m height, currents at 7.6, 15.4. 21.4 and 27.5 m depths, and temperature at 19 depths between 0.4 and 43.3 m depths were made from 19 August to 12 September 1974 at 8°41′N, 2...